1 elm34804aa - n 4 - g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - a mbient steady-state r ja 62.5 c /w parameter symbol limit unit note drain - s ource voltage vds 6 0 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id 4.5 a t a = 70 c 4.0 pulsed d rain current idm 20 a 3 power dissipation t c = 25 c pd 2.0 w t c = 70 c 1.3 j unction and storage temperature range tj , tstg - 55 to 150 c elm34804aa - n uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds = 6 0v ? id = 4.5 a ? rds (on) < 55 m (vgs = 10 v) ? rds (on) < 75 m (vgs =4. 5v) dual n-channel mosfet s 1 d1 s 2 d2 g2 g1 pin configuration c ircuit pin no. pin name 1 source1 2 gate 1 3 source 2 4 gate2 5 drain2 6 drain 2 7 drain 1 8 drain 1 so p - 8 (top vi ew) t a = 25 c . u nless otherwise noted. 4 3 2 1 5 6 7 8
2 elm34804aa - n 4 - electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 6 0 v zero g ate voltage drain current idss vds = 48 v, vgs = 0v 1 a vds = 4 0 v, vgs = 0v, t a = 55 c 10 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 1.0 1.5 2.5 v on s tate drain current i d ( on ) vgs = 10 v, vds = 5v 20 a 1 static drain - s ource on - r esistance r d s (o n ) vgs = 10 v, i d = 4.5 a 42 55 m 1 vgs =4. 5v, id = 4 a 5 5 75 forward transconductance gfs vds = 10 v, id = 4.5 a 14 s 1 diode forward voltage vsd i f = is , vgs = 0v 1 v 1 max.body-diode continuous current is 1.3 a pulsed current ism 2.6 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds = 2 5 v, f = 1mh z 650 pf output capacitance c oss 80 pf reverse transfer capacitance c r ss 35 pf switching parameters total gate charge q g vgs = 10 v, vds = 30 v, id = 4.5 a 12.5 18.0 nc 2 gate - s ource charge q gs 2.4 nc 2 gate - d rain charge q gd 2.6 nc 2 turn - o n delay time t d (on) vgs = 10 v, vds = 30 v , id = 1 a rgen = 6 11 20 ns 2 turn - o n rise t ime t r 8 18 ns 2 turn - o ff delay time t d ( of f ) 19 35 ns 2 turn - o ff fall t ime t f 6 15 ns 2 note : 1. pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature . 3. pulsed width limited by maximum junction temperature. 4 . duty cycle 1 %. dual n-channel mosfet t a = 25 c . u nless otherwise noted.
3 elm34804aa - n 4 - typical electrical and thermal characteristics 3 aug-19-2004 dual n-channel enhancement mode field effect transistor p5506hvg sop-8 lead-free niko-sem body diode forward voltage variation with source current and temperature 25 c t = 125 c 0.6 0.1 is - reverse drain current(a) 0.0001 0 0.001 0.01 sd 0.2 0.4 v = 0v 1 10 100 a gs 0.8 1.0 -55 c 1.2 v - body diode forward voltage(v) dual n-channel mosfet
4 elm34804aa - n 4 - 4 aug-19-2004 dual n-channel enhancement mode field effect transistor p5506hvg sop-8 lead-free niko-sem dual n-channel mosfet
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